ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Tunneling and thermionic emission through n+-GaAs–i-AlxGa1−xAs–n-GaAs heterojunction barriers are studied as a function of temperature from 77 to 200 K and as a function of externally applied uniaxial stress up to 10 kbar. A procedure to extract parameters for theoretical calculations is also proposed. The parameters extracted from the I-V characteristics of these heterostructures grown on (100) GaAs substrates with different aluminum mole fractions from 0.3 to 0.8 and thicknesses from 300 to 400 A(ring) agree well with those of previous reports. The dependence of the I-V characteristics on uniaxial stress in the 〈100〉 direction perpendicular to the heterojunction plane has also been measured. The experimental results show good agreement with theoretical calculations assuming there is a linear stress-dependent decrease of the energy-band edges of the longitudinal X valleys (Xl) in AlGaAs with respect to the Γ valley in GaAs. The slope of the decrease is found to be 14±2 meV/kbar. This results in an X-valley shear deformation potential of 9.6±1.8 eV, which is believed to be the most accurate measured value to date.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.345157
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