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  • 1990-1994  (12)
  • 1970-1974
  • 1990  (12)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4382-4385 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose and demonstrate a novel operation in the vertical integration of double-barrier resonant tunneling structures (DBRTS's) in which the negative differential resistance (NDR) region can be repeated. When two DBRTS's are combined in series, one of which has a higher peak current, a lower valley current, and a larger operation range of voltage in the NDR region than those of the other, the current-voltage (I-V) characteristic shows three current peaks instead of the conventional two. This phenomenon is based on the fundamental requirement of current continuity in serially combined devices. This operation provides a method to obtain a large number of current peaks by using less DBRTS's.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 31 (1990), S. 557-562 
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: This paper proposes a generalized realization of the potential groups SO(2,1) and SO(2,2) to describe the confluent hypergeometric and the hypergeometric equations, respectively. It implies that the classes of Schrödinger equations with solvable potentials whose analytical solutions are related to the confluent hypergeometric and the hypergeometric functions can be realized in terms of the above group structure.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1887-1888 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Delta doping in quantum well structures has been studied. The quantum wells consist of a strained InGaAs layer sandwiched between two GaAs layers. The layers were undoped except for a sheet of Si dopants deposited in the middle of the quantum well. Structures with various doses and quantum well thicknesses were studied and compared. Capacitance voltage measurements were carried out to determine the carrier distribution. A very narrow carrier profile with a full width at half maximum of only 12 A(ring) has been achieved. This is the narrowest carrier profile ever reported for any growth technique.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1640-1642 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Influence of indium doping on the qualities of AlGaAs layers grown by molecular beam epitaxy has been studied. It was found that a proper amount of In doping can increase the photoluminescence intensity drastically by a factor greater than 10 indicating an improvement in the optical quality of AlGaAs epilayers. The improvement in the material quality is attributed to a higher surface migration rate of In atoms than those of Ga and Al atoms leading to a reduction of group III vacancies. However, too great a concentration of In atoms leads to effects that may degrade the film quality.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1084-1087 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We examine the linear electro-optic response of a polymer thin film to an applied step function poling electric field. Time-resolved measurement of the electro-optic response is compared to theory. The electro-optic response measurement uses a heterodyne interferometric technique not previously reported. Response rise and fall times of the order of milliseconds are resolvable and the temperature dependence of those times reported. Good qualitative agreement between theory and data is presented.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1392-1394 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first layer growth in GaAs molecular beam epitaxy has been studied by reflection high-energy electron diffraction (RHEED). The time between the growth start and the first RHEED intensity peak is found to be dependent on the starting surface condition and is different from the time needed for a single layer growth. Periodic flux interruption has been used to study the surface recovery behavior as a function of growth time. When the growth time is the same as the time for a single layer growth, sustained two-dimensional growth can be obtained.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2311-2312 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first observation of the resonant tunneling features associated with the quantized levels in the accumulation layer of the double-barrier resonant tunneling structure (DBRTS) with undoped electrodes. This quantum effect causes additional kinks in the current-voltage (I-V) characteristic and an increasingly enhanced oscillation behavior in the differential conductance-voltage (G-V) curve. Three discrete quantum levels have been observed based on the room-temperature G-V curve. Our measurements are made without the presence of magnetic field and thus the experimental results are totally different from the magneto-oscillation.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food processing and preservation 14 (1990), S. 0 
    ISSN: 1745-4549
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Process Engineering, Biotechnology, Nutrition Technology
    Notes: Reconstitution and interchange studies of gluten, starch, and water soluble fractions from no- and 5-h fermentation sponges showed that gluten was altered and was responsible for the early rheological changes in cracker sponges. It was also shown that breaking of disulfide bonds was responsible for those changes. the “slurry” or inoculum was found to have the greatest effect on rheological properties. Chemical agents, such as sodium bisulfite, cysteine, and glutathione, were effective in reducing the resistance-to-extension of cracker sponges at higher pH levels. However, those effects were eliminated by the lactic acid produced in the sponge during fermentation. Therefore, the changes in rheology occurring early in fermentation do not appear to be important in cracker baking.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 335 (1990), S. 125-130 
    ISSN: 1434-601X
    Keywords: 02.70.+d ; 06.50.Mk ; 21.60.Jz
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We propose an iterative procedure for the numerical evolution of Dirac equation. It is a fast and stable version of the coordinate-space predictor-corrector method and can be extended to (3+1) dimensions for the relativistic mean-field calculation of heavy-ion collisions. A detailed example is worked out for the case of the Bottcher-Strayer pair production mechanism in (1+1) dimensions.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    New York, NY : Wiley-Blackwell
    International Journal of Quantum Chemistry 38 (1990), S. 873-879 
    ISSN: 0020-7608
    Keywords: Computational Chemistry and Molecular Modeling ; Atomic, Molecular and Optical Physics
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: As well as being of interest in their own right, many of the essential features of the lattice properties of crystalline atomic hydrogen should be interpretable in terms of the lattice properties of one- or two-layer hydrogen films. Here we present optimized equilibrium lattice parameters for monatomic hydrogen one- and two-layer films in several Bravais lattices as determined by all electron, full potential localdensity-approximation calculations.
    Additional Material: 4 Tab.
    Type of Medium: Electronic Resource
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