In:
Journal of Semiconductors, IOP Publishing, Vol. 41, No. 7 ( 2020-07-01), p. 072904-
Abstract:
Semiconductive two dimensional (2D) materials have attracted significant research attention due to their rich band structures and promising potential for next-generation electrical devices. In this work, we investigate the MoS 2 field-effect transistors (FETs) with a dual-gated (DG) architecture, which consists of symmetrical thickness for back gate (BG) and top gate (TG) dielectric. The thickness-dependent charge transport in our DG-MoS 2 device is revealed by a four-terminal electrical measurement which excludes the contact influence, and the TCAD simulation is also applied to explain the experimental data. Our results indicate that the impact of quantum confinement effect plays an important role in the charge transport in the MoS 2 channel, as it confines charge carriers in the center of the channel, which reduces the scattering and boosts the mobility compared to the single gating case. Furthermore, temperature-dependent transfer curves reveal that multi-layer MoS 2 DG-FET is in the phonon-limited transport regime, while single layer MoS 2 shows typical Coulomb impurity limited regime.
Type of Medium:
Online Resource
ISSN:
1674-4926
,
2058-6140
DOI:
10.1088/1674-4926/41/7/072904
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2020
detail.hit.zdb_id:
2484682-X
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