In:
Angewandte Chemie, Wiley, Vol. 133, No. 29 ( 2021-07-12), p. 16145-16154
Abstract:
Single‐atom metal‐insulator‐semiconductor (SMIS) heterojunctions based on Sn‐doped Fe 2 O 3 nanorods (SF NRs) were designed by combining atomic deposition of an Al 2 O 3 overlayer with chemical grafting of a RuO x hole‐collector for efficient CO 2 ‐to‐syngas conversion. The RuO x ‐Al 2 O 3 ‐SF photoanode with a 3.0 nm thick Al 2 O 3 overlayer gave a 〉 5‐fold‐enhanced IPCE value of 52.0 % under 370 nm light irradiation at 1.2 V vs. Ag/AgCl, compared to the bare SF NRs. The dielectric field mediated the charge dynamics at the Al 2 O 3 /SF NRs interface. Accumulation of long‐lived holes on the surface of the SF NRs photoabsorber aids fast tunneling transfer of hot holes to single‐atom RuO x species, accelerating the O 2 ‐evolving reaction kinetics. The maximal CO‐evolution rate of 265.3 mmol g −1 h −1 was achieved by integration of double SIMS‐3 photoanodes with a single‐atom Ni‐doped graphene CO 2 ‐reduction‐catalyst cathode; an overall quantum efficiency of 5.7 % was recorded under 450 nm light irradiation.
Type of Medium:
Online Resource
ISSN:
0044-8249
,
1521-3757
DOI:
10.1002/ange.v133.29
DOI:
10.1002/ange.202102983
Language:
English
Publisher:
Wiley
Publication Date:
2021
detail.hit.zdb_id:
505868-5
detail.hit.zdb_id:
506609-8
detail.hit.zdb_id:
514305-6
detail.hit.zdb_id:
505872-7
detail.hit.zdb_id:
1479266-7
detail.hit.zdb_id:
505867-3
detail.hit.zdb_id:
506259-7
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