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  • 1
    Online Resource
    Online Resource
    Room-temperature photoluminescence of ZnO/MgO multiple quantum wells deposited by reactive magnetron sputtering
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2007
    In:  Acta Physica Sinica Vol. 56, No. 2 ( 2007), p. 1082-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 56, No. 2 ( 2007), p. 1082-
    Abstract: Wurtzite ZnO/MgO superlattices were successfully grown on Si(001) substrates at 750℃ using radio-frequency reactive magnetron sputtering method. X-ray reflection and diffraction, electronic probe and photoluminescence analysis were used to characterize the multiple quantum wells (MQWs). The results showed the periodic layer thickness of the MQWs to be 1.85 to 22.3 nm. The blueshift induced by quantum confinement was observed. Least square fitting method was used to deduce the zero phonon energy of the exciton from the room-temperature photoluminescence. It was found that the MgO barrier layers has a much larger offset than ZnMgO. The fluctuation of periodic layer thickness of the MQWs was suggested to be a possible reason causing the photoluminescence spectrum broadening.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.56.1082
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2007
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  • 2
    Online Resource
    Online Resource
    Effect of sapphire substrate pre-treatment on the growth of ZnO films
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2008
    In:  Acta Physica Sinica Vol. 57, No. 2 ( 2008), p. 1133-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 57, No. 2 ( 2008), p. 1133-
    Abstract: Using the reactive radio-frequent magnetron sputtering method, ZnO thin films were deposited on pretreated (100) sapphire substrates. The effect of substrate pretreatments on the growth of ZnO films was studied with the structural and morphological characterization using atomic force microscopy, reflection high-energy electron diffraction and X-ray diffraction. It was found that both the original substrate and the substrates annealed in vacuum (8×10-4 Pa), nitrogen atmosphere (40 Pa), and oxygen atmosphere (40 Pa) at 750℃ for 4h have the same surface structure that can be indexed to be α-Al2O3 (001). The surface morphologies of the substrates are different from each other. All the ZnO films grown on the substrates are highly c-axis textured. Their morphologies, however, are related to the pretreatment. For the substrate annealed in vacuum, the film has the morphology with -c and +c epitaxial islands, similar to ZnO grown on the untreated substrate. For the substrate annealed in nitrogen, the film has the morphology with only -c epitaxial islands and has quite large grains and surface roughness. For the substrate annealed in oxygen, the films also has the morphology with -c epitaxial islands, but the surface is much smoother. The surface roughness is as small as 15nm.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.57.1133
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2008
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  • 3
    Online Resource
    Online Resource
    Influences of growth temperature on the crystalline characteristics and optical properties for ZnO films deposited by reactive magnetron sputtering
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2006
    In:  Acta Physica Sinica Vol. 55, No. 3 ( 2006), p. 1390-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 55, No. 3 ( 2006), p. 1390-
    Abstract: Using reactive radio-frequency magnetron sputtering, ZnO films with strong c-axi s orientation have been deposited on Si (100) substrates at temperatures ranging from room temperature (RT) to 750℃. We have studied the influence of growth te mperature on the structural characteristics of the as-deposited films in morphol ogy, grain size, microstructure, and residual stress by using atomic force micro scopy, transmission electron microscopy, X-ray diffraction, and Raman spectrosco py. With the measurement of the transmission spectra and photoluminescence (PL) properties, the relationship between the crystallinity and optical properties of ZnO films have been discussed. It is found that the grain size increases with t emperature up to 500℃, and then decreases at 750℃. ZnO grains have an epitaxia l relationship with Si (100) substrate for the films deposited at the temperatur es ranging from RT to 750℃. The films deposited below 500℃ are in the states o f compressive strain while the film deposited at 750℃ is in tensile. The differ ence in growth temperature results in the variation of refractive index, extinct ion coefficient, optical energy gap, and PL properties of the films. It is concl uded that growth temperature dominates the PL behavior of ZnO films. We also dis cuss the physical mechanism affecting the PL behavior.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.55.1390
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2006
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  • 4
    Online Resource
    Online Resource
    Two-step growth of ZnO films deposited by reactive radio-frequency magnetron sputtering on Si(001) substrate
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2007
    In:  Acta Physica Sinica Vol. 56, No. 4 ( 2007), p. 2369-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 56, No. 4 ( 2007), p. 2369-
    Abstract: Using reactive radio-frequency magnetron sputtering, ZnO films have been deposited on Si(001) substrate with a two-step growth method. The first step: depositing a ZnO buffer layer at low temperature and annealing at 800 ℃, the second step: growing the ZnO at the temperature of 750 ℃. In this paper, we discuss the dependence of the ZnO film growth on the etching time of Si chips and the deposition time of the buffer layer. It is found that different deposition time of the buffer layer results in the difference in the morphology of ZnO films. The difference can be related to the coverage of the buffer layer. When the buffer layer does not cover the substrate, the ZnO film has small grains similar to the film without buffer layer and quite large roughness and internal stress. When the substrate is completely covered by the buffer layer, a ZnO film can be obtained with large-sized grains, smooth surface and low internal stress. The growth behavior of the ZnO films is also related to the etching time of Si chip. With the increase of etching time, both the roughness of the ZnO films and the correlation length of the self-affine morphology decrease.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.56.2369
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2007
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  • 5
    Online Resource
    Online Resource
    Highly c-axis textured ZnO thin films grown by electrochemical deposition and their optical properties
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2007
    In:  Acta Physica Sinica Vol. 56, No. 10 ( 2007), p. 5979-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 56, No. 10 ( 2007), p. 5979-
    Abstract: ZnO thin films were electrodeposited on glasses coated with a transparent-conductive film (InSnO) with different deposition currents. We have studied the dependence of microstructure, morphology and photoluminescence (PL) on the deposition current by X-ray diffraction, scanning electron microscopy and PL measurement at room temperature. We found that all the films show highly c-axis textured structure and the surface morphology is strongly current-dependent. The transmission spectra show that the films have a transmittance higher than 80% in the visible range. The films have an increase in thickness with the deposition current. The PL spectra exhibit two emission bands, an ultraviolet (UV) one from the exciton transition and a visible light one that might emerge from the defects in the films. The UV emission band has an obvious blueshift, which is found to be due to in doping during the deposition. With the increase of deposition current, the UV emission decreases while the visible light emission goes up.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.56.5979
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2007
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  • 6
    Online Resource
    Online Resource
    Influence of working pressure on the crystallinity and growth behavior of ZnO films deposited by reactive radio-frequency magnetron sputtering
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2006
    In:  Acta Physica Sinica Vol. 55, No. 10 ( 2006), p. 5479-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 55, No. 10 ( 2006), p. 5479-
    Abstract: Using the reactive radio-frequency magnetron sputtering method, ZnO films were deposited on Si (001) and quartz substrates at different pressures with a fixed flow ratio of Ar to O2. The influence of working pressure on the crystallinity and growth behavior were studied with the help of characterization of the morphology, microstructure and optical properties of the films by atomic force microscopy (AFM), X-ray diffraction (XRD), transmission electron microscopy (TEM) and transmittance spectra,respectively. It is found that a critical working pressure can be taken as 0.5—1.0 Pa. With increasing the working pressure from 0.1 Pa up to the critical working pressure, the density of ZnO grains decreases and the films have high c-axis orientation with strong in-plane textured feature. When the working pressure exceeds the critical working pressure, the density of ZnO grains is roughtly a constant and the in-plane textured feature disappears. The influence of working pressure on the refractive index, extinction coefficient and optical energy gap is also discussed in the paper.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.55.5479
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2006
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    Online Resource
  • 7
    Online Resource
    Online Resource
    Growth behavior of ZnO nanoparticles formed on Zn implanted Si(001) combined with thermal oxidation
    Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences ; 2009
    In:  Acta Physica Sinica Vol. 58, No. 8 ( 2009), p. 5693-
    Details
    In: Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 58, No. 8 ( 2009), p. 5693-
    Abstract: Si（001） chips were implanted by Zn ions of 40 keV with different ion dosages and are annealed in air at different temperatures. Atomic force microcopy， transmission electron microcopy， X-ray diffraction and electron probe are applied to study the microstructure， morphology and chemical composition of the chips, either as-implanted or annealed at different temperatures. It was found that the as-implanted Zn atoms aggregate into clusters scattering about 35 nm beneath the surface of the chips. During the annealing process， Zn atoms are found to migrate towards the surface of the chips and aggregate into nanoparticles at the interface between the amorphous SiO2 layer and polycrystal line Si layer. Annealing temperature was found to be the crucial factor controlling the formation of ZnO nanoparticles. ZnO nanoparticles begin to appear at about 400 ℃ and the diffraction intensity of ZnO becomes strong while the diffraction intensity of metallic Zn weakens with increasing annealing temperature. At the annealing temperature of 800 ℃， Zn2SiO4 phase was observed due to the reaction between ZnO and SiO2 or Si.
    Type of Medium: Online Resource
    ISSN: 1000-3290 , 1000-3290
    URL: Journal
    URL: Article
    DOI: 10.7498/aps
    DOI: 10.7498/aps.58.5693
    Language: Unknown
    Publisher: Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
    Publication Date: 2009
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