In:
Journal of Applied Physics, AIP Publishing, Vol. 96, No. 12 ( 2004-12-15), p. 7108-7111
Abstract:
Oxygen radicals pregrowth treatment and surface nitridation were used to eliminate Zn-polar inversion domains and control the growth of single-domain O-polar ZnO film on sapphire (0001) substrate by rf plasma-assisted molecular beam epitaxy. We found that the formation of oxygen-terminated sapphire surface prior to nitridation is crucial for achieving the anion polarity in subsequent AlN and ZnO layers, as demonstrated by formation of the 3×3 surface reconstruction during ZnO growth and ex situ polarity determination. This method, in general, can be applied to growth of other polar films, such as II-VI oxides and III-V nitrides, on sapphire (0001) substrates.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2004
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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