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  • AIP Publishing  (5)
  • Zhang, Wei  (5)
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  • AIP Publishing  (5)
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  • 1
    Online Resource
    Online Resource
    AIP Publishing ; 2016
    In:  Matter and Radiation at Extremes Vol. 1, No. 1 ( 2016-01-01), p. 8-27
    In: Matter and Radiation at Extremes, AIP Publishing, Vol. 1, No. 1 ( 2016-01-01), p. 8-27
    Abstract: In this paper, we give a review of our theoretical and experimental progress in octahedral spherical hohlraum study. From our theoretical study, the octahedral spherical hohlraums with 6 Laser Entrance Holes (LEHs) of octahedral symmetry have robust high symmetry during the capsule implosion at hohlraum-to-capsule radius ratio larger than 3.7. In addition, the octahedral spherical hohlraums also have potential superiority on low backscattering without supplementary technology. We studied the laser arrangement and constraints of the octahedral spherical hohlraums, and gave a design on the laser arrangement for ignition octahedral hohlraums. As a result, the injection angle of laser beams of 50°–60° was proposed as the optimum candidate range for the octahedral spherical hohlraums. We proposed a novel octahedral spherical hohlraum with cylindrical LEHs and LEH shields, in order to increase the laser coupling efficiency and improve the capsule symmetry and to mitigate the influence of the wall blowoff on laser transport. We studied on the sensitivity of the octahedral spherical hohlraums to random errors and compared the sensitivity among the octahedral spherical hohlraums, the rugby hohlraums and the cylindrical hohlraums, and the results show that the octahedral spherical hohlraums are robust to these random errors while the cylindrical hohlraums are the most sensitive. Up till to now, we have carried out three experiments on the spherical hohlraum with 2 LEHs on Shenguang(SG) laser facilities, including demonstration of improving laser transport by using the cylindrical LEHs in the spherical hohlraums, spherical hohlraum energetics on the SGIII prototype laser facility, and comparisons of laser plasma instabilities between the spherical hohlraums and the cylindrical hohlraums on the SGIII laser facility.
    Type of Medium: Online Resource
    ISSN: 2468-2047 , 2468-080X
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2016
    detail.hit.zdb_id: 2858469-7
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  • 2
    In: Applied Physics Letters, AIP Publishing, Vol. 119, No. 24 ( 2021-12-13)
    Abstract: Eight-junction In0.53Ga0.47As laser power converters (LPCs) designed for converting the laser energy around 1520 nm are demonstrated with a maximum room-temperature (RT) conversion efficiency of 36.9 ± 0.9% at 53.9 W/cm2. Subcell photocurrents of the LPC are extracted from current steps in wide-voltage-range I–V curves, and the current mismatching degree (Cm) at RT is determined to be ∼5%. Temperature dependence of the Cm of the InGaAs LPC confirms that the LPC reaches its minimal Cm around RT. Finally, the LPCs are characterized under different temperatures and laser powers, and the temperature coefficients of the open circuit voltage and conversion efficiency are fitted to be −12 mV/K and −0.155%abs/K, respectively. The experimental results show the potential of In0.53Ga0.47As multijunction LPCs for applications in free space and fiber-based long distance laser power transmission.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2021
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 3
    In: Applied Physics Letters, AIP Publishing, Vol. 118, No. 23 ( 2021-06-07)
    Abstract: Multiple steps are observed in the I–V curves of current-mismatched six-junction InGaAs laser power converters with the voltage ranging from reverse breakdown voltage to open circuit voltage. The formation mechanism of the I–V curves is analyzed using a series-connected device model. The voltage drops across subcells can be significantly different at a certain current, and the steps represent the subcell photocurrents. The photocurrents of subcells are experimentally determined, and the degree of current mismatch is obtained for a multijunction laser power converter (MJLPC), which provides useful information for the design and fabrication of high-efficiency MJLPC. In addition, the absorption coefficient of InGaAs is extracted based on the current mismatch degrees at different temperatures, providing another way to determine the active layer absorption coefficient of an MJLPC.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2021
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 4
    In: Review of Scientific Instruments, AIP Publishing, Vol. 81, No. 3 ( 2010-03-01)
    Abstract: The synchrotron radiation originated from the energetic runaway electrons has been measured by a visible complementary metal oxide semiconductor camera working in the wavelength ranges of 380–750 nm in the Experimental Advanced Superconducting Tokamak [H. Q. Liu et al., Plasma Phys. Contr. Fusion 49, 995 (2007)]. With a tangential viewing into the plasma in the direction of electron approach on the equatorial plane, the synchrotron radiation from the energetic runaway electrons was measured in full poloidal cross section. The synchrotron radiation diagnostics provides a direct pattern of the runaway beam inside the plasma. The energy and pitch angle of runaway electrons have been obtained according to the synchrotron radiation pattern. A stable shell shape of synchrotron radiation has been observed in a few runaway discharges.
    Type of Medium: Online Resource
    ISSN: 0034-6748 , 1089-7623
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2010
    detail.hit.zdb_id: 209865-9
    detail.hit.zdb_id: 1472905-2
    SSG: 11
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  • 5
    In: APL Materials, AIP Publishing, Vol. 7, No. 8 ( 2019-08-01)
    Abstract: Fast and reversible phase transitions in chalcogenide phase-change materials (PCMs), in particular, Ge-Sb-Te compounds, are not only of fundamental interests but also make PCMs based random access memory a leading candidate for nonvolatile memory and neuromorphic computing devices. To RESET the memory cell, crystalline Ge-Sb-Te has to undergo phase transitions first to a liquid state and then to an amorphous state, corresponding to an abrupt change in electrical resistance. In this work, we demonstrate a progressive amorphization process in GeSb2Te4 thin films under electron beam irradiation on a transmission electron microscope (TEM). Melting is shown to be completely absent by the in situ TEM experiments. The progressive amorphization process resembles closely the cumulative crystallization process that accompanies a continuous change in electrical resistance. Our work suggests that if displacement forces can be implemented properly, it should be possible to emulate symmetric neuronal dynamics by using PCMs.
    Type of Medium: Online Resource
    ISSN: 2166-532X
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2019
    detail.hit.zdb_id: 2722985-3
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