In:
Advanced Materials Interfaces, Wiley, Vol. 9, No. 14 ( 2022-05)
Abstract:
Cobalt oxides (Co x O y ) have shown great potential for applications in catalysts, sensors, and energy storage fields, and their performance remarkably depends on their oxidation states. Herein, Co x O y films with precisely controlled composition are first introduced by atomic layer deposition (ALD) using bis( N , N 0‐di‐iso‐propylacetamidinato)cobalt(II) (Co(iPr 2 ‐Me‐AMD) 2 ) as Co precursor and H 2 O/O 3 as oxidants. The results show that the ALD processes using both oxidants exhibit typical self‐limiting characteristic, where cubic‐CoO films, with growth rate of 0.045 nm per cycle, are obtained at 150–200 °C using H 2 O oxidant, while cubic‐Co 3 O 4 films, with growth rate of 0.05 nm per cycle, can be deposited at 200–225 °C using O 3 oxidant. Both CoO and Co 3 O 4 films show dense, smooth microstructure, and good crystallinity with typical columnar crystal feature, where the Co 3 O 4 film shows smaller columnar size because the O 3 promotes rapid nucleation with relatively higher density of nucleation sites. The thermodynamic growth mechanism of ALD process is established via density functional theory calculations, which demonstrates that the exothermic reaction path of O 3 is more energetically than that of H 2 O. Both films possess relatively low resistivity of ≈10 −1 Ω cm −1 with p‐type semiconductor behavior, which shows promising application potentials of these films.
Type of Medium:
Online Resource
ISSN:
2196-7350
,
2196-7350
DOI:
10.1002/admi.202200097
Language:
English
Publisher:
Wiley
Publication Date:
2022
detail.hit.zdb_id:
2750376-8
Permalink