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  • IOP Publishing  (3)
  • Zhang, Lijie  (3)
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  • IOP Publishing  (3)
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  • 1
    Online Resource
    Online Resource
    Signatures of strong interlayer coupling in γ-InSe revealed by local differential conductivity*
    IOP Publishing ; 2021
    In:  Chinese Physics B Vol. 30, No. 8 ( 2021-08-01), p. 087306-
    Details
    In: Chinese Physics B, IOP Publishing, Vol. 30, No. 8 ( 2021-08-01), p. 087306-
    Abstract: Interlayer coupling in layered semiconductors can significantly affect their optoelectronic properties. However, understanding the mechanisms behind the interlayer coupling at the atomic level is not straightforward. Here, we study modulations of the electronic structure induced by the interlayer coupling in the γ -phase of indium selenide ( γ -InSe) using scanning probe techniques. We observe a strong dependence of the energy gap on the sample thickness and a small effective mass along the stacking direction, which are attributed to strong interlayer coupling. In addition, the moiré patterns observed in γ -InSe display a small band-gap variation and nearly constant local differential conductivity along the patterns. This suggests that modulation of the electronic structure induced by the moiré potential is smeared out, indicating the presence of a significant interlayer coupling. Our theoretical calculations confirm that the interlayer coupling in γ -InSe is not only of the van der Waals origin, but also exhibits some degree of hybridization between the layers. Strong interlayer coupling might play an important role in the performance of γ -InSe-based devices.
    Type of Medium: Online Resource
    ISSN: 1674-1056
    URL: Article
    DOI: 10.1088/1674-1056/abff32
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 2021
    detail.hit.zdb_id: 2412147-2
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    Online Resource
  • 2
    Online Resource
    Online Resource
    Realization of semiconducting Cu 2 Se by direct selenization of Cu(111)*
    IOP Publishing ; 2021
    In:  Chinese Physics B Vol. 30, No. 11 ( 2021-11-01), p. 116802-
    Details
    In: Chinese Physics B, IOP Publishing, Vol. 30, No. 11 ( 2021-11-01), p. 116802-
    Abstract: Bulk group IB transition-metal chalcogenides have been widely explored due to their applications in thermoelectrics. However, a layered two-dimensional form of these materials has been rarely reported. Here, we realize semiconducting Cu 2 Se by direct selenization of Cu(111). Scanning tunneling microcopy measurements combined with first-principles calculations allow us to determine the structural and electronic properties of the obtained structure. X-ray photoelectron spectroscopy data reveal chemical composition of the sample, which is Cu 2 Se. The observed moiré pattern indicates a lattice mismatch between Cu 2 Se and the underlying Cu(111)- 3 × 3 surface. Differential conductivity obtained by scanning tunneling spectroscopy demonstrates that the synthesized Cu 2 Se exhibits a band gap of 0.78 eV. Furthermore, the calculated density of states and band structure demonstrate that the isolated Cu 2 Se is a semiconductor with an indirect band gap of ∼ 0.8 eV, which agrees quite well with the experimental results. Our study provides a simple pathway varying toward the synthesis of novel layered 2D transition chalcogenides materials.
    Type of Medium: Online Resource
    ISSN: 1674-1056
    URL: Article
    DOI: 10.1088/1674-1056/ac0037
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 2021
    detail.hit.zdb_id: 2412147-2
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    Online Resource
  • 3
    Online Resource
    Online Resource
    Two-dimensional germanium islands with Dirac signature on Ag 2 Ge surface alloy
    IOP Publishing ; 2021
    In:  Journal of Physics: Condensed Matter Vol. 33, No. 22 ( 2021-06-02), p. 225001-
    Details
    In: Journal of Physics: Condensed Matter, IOP Publishing, Vol. 33, No. 22 ( 2021-06-02), p. 225001-
    Abstract: Two-dimensional (2D) Dirac materials have attracted intense research efforts due to their promise for applications ranging from field-effect transistors and low-power electronics to fault-tolerant quantum computation. One key challenge is to fabricate 2D Dirac materials hosting Dirac electrons. Here, monolayer germanene is successfully fabricated on a Ag 2 Ge surface alloy. Scanning tunneling spectroscopy measurements revealed a linear energy dispersion relation. The latter was supported by density functional theory calculations. These results demonstrate that monolayer germanene can be realistically fabricated on a Ag 2 Ge surface alloy. The finding opens the door to exploration and study of 2D Dirac material physics and device applications.
    Type of Medium: Online Resource
    ISSN: 0953-8984 , 1361-648X
    URL: Article
    DOI: 10.1088/1361-648X/abe731
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 2021
    detail.hit.zdb_id: 1472968-4
    detail.hit.zdb_id: 228975-1
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