In:
Applied Physics Letters, AIP Publishing, Vol. 92, No. 10 ( 2008-03-10)
Kurzfassung:
Temperature dependence on electrical characteristics of a Ni∕Au–Al0.45Ga0.55N Schottky photodiode is investigated in a temperature range of 198–323K. The ideality factor decreases from 2.57 to 1.75, while the barrier height increases from 0.75to1.14eV in this temperature range. The ln(I)-V curves at a small forward current are intersectant at 273, 298, and 323K and are almost parallel at 198, 223, and 248K. This crossing of the ln(I)-V curves is an inherent property of Schottky diodes, and the almost parallel curves can be well explained by thermionic field emission theory.
Materialart:
Online-Ressource
ISSN:
0003-6951
,
1077-3118
Sprache:
Englisch
Verlag:
AIP Publishing
Publikationsdatum:
2008
ZDB Id:
211245-0
ZDB Id:
1469436-0
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