In:
Nature Communications, Springer Science and Business Media LLC, Vol. 8, No. 1 ( 2017-05-23)
Abstract:
The topological materials have attracted much attention for their unique electronic structure and peculiar physical properties. ZrTe 5 has host a long-standing puzzle on its anomalous transport properties manifested by its unusual resistivity peak and the reversal of the charge carrier type. It is also predicted that single-layer ZrTe 5 is a two-dimensional topological insulator and there is possibly a topological phase transition in bulk ZrTe 5 . Here we report high-resolution laser-based angle-resolved photoemission measurements on the electronic structure and its detailed temperature evolution of ZrTe 5 . Our results provide direct electronic evidence on the temperature-induced Lifshitz transition, which gives a natural understanding on underlying origin of the resistivity anomaly in ZrTe 5 . In addition, we observe one-dimensional-like electronic features from the edges of the cracked ZrTe 5 samples. Our observations indicate that ZrTe 5 is a weak topological insulator and it exhibits a tendency to become a strong topological insulator when the layer distance is reduced.
Type of Medium:
Online Resource
ISSN:
2041-1723
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2017
detail.hit.zdb_id:
2553671-0
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