In:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, American Vacuum Society, Vol. 31, No. 6 ( 2013-11-01)
Abstract:
X-ray photoelectron spectroscopy and reflection absorption infrared spectroscopy (RAIRS) have been used to study the dissociative adsorption of trimethylgallium (TMG) on the ZrB2(0001) surface. Spectra were obtained as a function of annealing temperature following TMG exposure at temperatures of 95 and 300 K, and also as a function of TMG exposure for a surface temperature of 300 K. After annealing above 220 K, a significant decrease in the relative concentration of carbon and gallium occurred accompanied by a shift of ∼0.2 eV in the Ga 2p3/2 binding energy. The RAIR spectra show that after annealing to ∼220 K, only one CH3 deformation band at 1196 cm−1 remains, the intensity of which is considerably decreased indicating loss of at least one methyl group from TMG. Further annealing leads to the sequential loss of the other methyl groups. The first methyl desorbs while the last two dissociate to deposit two C atoms per TMG molecule onto the ZrB2 surface.
Type of Medium:
Online Resource
ISSN:
0734-2101
,
1520-8559
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2013
detail.hit.zdb_id:
1475424-1
detail.hit.zdb_id:
797704-9
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