In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 55, No. 4S ( 2016-04-01), p. 04EL04-
Abstract:
We investigated hybrid organic–inorganic complementary inverters with a solution-processed indium–gallium–zinc-oxide (IGZO) n-channel thin-film transistor (TFT) and p-channel TFTs using the high-uniformity polymer poly[2,5-bis(alkyl)pyrrolo[3,4- c ]pyrrolo-1,4(2 H ,5 H )-dione- alt -5,5-di(thiophene-2-yl)-2,2-( E )-2-(2-(thiophen-2-yl)vinyl)thiophene] (PDVT-10). The IGZO TFT was fabricated at 150 °C for 1 min. It showed a high field-effect mobility of 0.9 cm 2 ·V −1 ·s −1 and a high on/off current ratio of 10 7 . A hybrid complementary inverter was fabricated by combining IGZO with a PDVT-10 thin-film transistor and its operation was confirmed.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.55.04EL04
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2016
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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