In:
ECS Transactions, The Electrochemical Society, Vol. 50, No. 9 ( 2013-03-15), p. 949-956
Abstract:
We report the demonstration of Ge0.97Sn0.03 P-MOSFETs, featuring low temperature Si2H6 passivation, HfO2 high-k dielectric and TaN metal gate. Ge0.97Sn0.03 P-MOSFET with high drive current and negligible hysteresis was realized. NBTI characterization was performed to investigate the off-leakage, suthreshold swing, peak transconductance degradation and threshold voltage shift under stress. Excellent device reliability characteristics were observed.
Type of Medium:
Online Resource
ISSN:
1938-5862
,
1938-6737
DOI:
10.1149/05009.0949ecst
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2013
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