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  • Yang, Li  (4)
  • Physics  (4)
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  • Physics  (4)
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  • 1
    Online Resource
    Online Resource
    AIP Publishing ; 2022
    In:  Applied Physics Letters Vol. 120, No. 26 ( 2022-06-27)
    In: Applied Physics Letters, AIP Publishing, Vol. 120, No. 26 ( 2022-06-27)
    Abstract: We demonstrated that Schottky barrier height (SBH) at the metal/CVD-grown MoTe2 interface can be significantly reduced with tunnel contact by inserting a thin Al2O3 layer regardless of the metal work function. The existence of strong Fermi level pinning (FLP) at the metal/MoTe2 interface was verified, while depinning cannot be achieved with Al2O3 insertion. Thus, the fixed charges inside the Al2O3 were proposed to be responsible for the effective SBH reduction in virtue of the eliminated SBH reduction after the post-annealing treatment. This work provides a feasible way to solve the contact issue and favors for the fabrication of high performance MoTe2-based electronic devices.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2022
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 2
    Online Resource
    Online Resource
    AIP Publishing ; 2021
    In:  Applied Physics Letters Vol. 119, No. 13 ( 2021-09-27)
    In: Applied Physics Letters, AIP Publishing, Vol. 119, No. 13 ( 2021-09-27)
    Abstract: We report the fabrication of high performance MoTe2/Si heterojunction photodiodes by direct growth of MoTe2 patterns on a commercial Si substrate by a feasible chemical vapor deposition method. The devices exhibit an ultrafast response speed with a rise/fall time of 5/8 μs, a broadband (400–1550 nm) photoresponse, a high on/off ratio of ∼104, and self-powered photo-detection with a zero bias responsivity of 0.26 A W−1 and a detectivity of 2 × 1013 Jones at 700 nm wavelength. The devices further show high stability in air for one month. This investigation offers the feasibility to fabricate high performance MoTe2/Si photodiodes for future vital optoelectronic applications.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2021
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
    Location Call Number Limitation Availability
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  • 3
    In: Applied Physics Letters, AIP Publishing, Vol. 121, No. 8 ( 2022-08-22)
    Abstract: We demonstrated a feasible strategy to fabricate MoTe2/Ge heterojunction by direct growth of Ge flake on a MoTe2 film substrate with a two-step chemical vapor deposition method. A thin transition layer (∼4 nm) mainly composed of polycrystalline germanium at the MoTe2/Ge interface was verified during the Ge flake growth. The MoTe2/Ge heterojunction-based photodetector exhibits both the response speed with a rise/fall time of 7/4 μs and the photoresponsivity and detectivity with 4.87 A W−1 and 5.02 × 1011 Jones under zero bias in the near-infrared regime, respectively. The characteristics of device performance imply its practical applicability as building block for potential near-infrared integrated photonics.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2022
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
    Location Call Number Limitation Availability
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  • 4
    In: Applied Physics Letters, AIP Publishing, Vol. 123, No. 10 ( 2023-09-04)
    Abstract: Field-free room-temperature modulating magnetic domain structures and realizing stable nanoscale magnetic bubbles in 2D van der Waals (vdW) intrinsic ferromagnets are fundamentally important for 2D spintronic devices. However, it is still very challenging for the absence of a proper room-temperature 2D vdW ferromagnet with suitable perpendicular magnetic anisotropy. Here, by using a 2D vdW intrinsic room-temperature ferromagnetic Fe3GaTe2 crystal with Curie temperature of over ∼340 K and large perpendicular magnetic anisotropy, we study field-free thickness-dependent magnetic domain structure evolution in Au-capped 2D Fe3GaTe2 nanosheets by magnetic force microscopy at room temperature. The magnetic domain varies from a labyrinth-like stripe domain to a single domain in Au/Fe3GaTe2 (20/x nm) with decreasing Fe3GaTe2 thickness from 129 to 17.8 nm. Importantly, the field-free, spontaneous, stable, nanoscale magnetic bubbles can be realized in Au/Fe3GaTe2 (8/x nm) with a wide range of Fe3GaTe2 thickness over 30 nm. The highest bubble density and smallest diameter are measured as ∼2.65 μm−1 and ∼130 nm, respectively, superior to that of most room-temperature magnetic bubble materials. This work paves the way for field-free, room-temperature magnetic domain modulation and vdW-integrated spintronic applications of 2D vdW crystals.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
    Location Call Number Limitation Availability
    BibTip Others were also interested in ...
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