In:
Journal of Applied Physics, AIP Publishing, Vol. 113, No. 13 ( 2013-04-07)
Abstract:
A reproducible p-type P-N codoped ZnO [ZnO:(P, N)] film with high quality was achieved by magnetron sputtering and post-annealing techniques. It has room-temperature resistivity of 3.98 Ωcm, Hall mobility of 1.35 cm2/Vs, and carrier concentration of 1.16 × 1018 cm−3, which is better than electrical properties of the p-type N-doped ZnO (ZnO:N) and p-type P-doped ZnO (ZnO:P) films. Additionally, the p-ZnO:(P, N)/n-ZnO homojunction showed a clear p-n diode characteristic. The p-type conductivity of ZnO:(P, N) is attributed to the formation of an impurity band above the valance band maximum, resulting in a reduction in the band gap and a decrease in the ionization energy of the acceptor, as well as an improvement in the conductivity and stability of the p-type ZnO:(P, N).
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2013
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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