In:
Advanced Theory and Simulations, Wiley, Vol. 2, No. 5 ( 2019-05)
Abstract:
Very recently, high‐mobility and air‐stable 2D semiconductor Bi 2 O 2 Se has been discovered and believed to be a promising channel candidate for the next‐generation field‐effect transistor (FET). High‐performance few‐layer Bi 2 O 2 Se FETs have been realized due to the existence of ohmic contact between few‐layer Bi 2 O 2 Se and the metal electrodes. However, monolayer (ML) Bi 2 O 2 Se FET exhibits poor device performance owing to lack of good contact between ML Bi 2 O 2 Se and the metal electrode. This work simulates the ML Bi 2 O 2 Se Schottky barrier field‐effect transistors with a sequence of common electrodes (Au, Pd, Pt, Ag, Sc, and Ti) for the first time by using ab initio quantum transport simulations. For Ag, Au, and Pd electrodes, a lateral n ‐type Schottky contact is formed with similar Schottky barrier heights of 0.43–0.52 eV due to a strong usual Fermi‐level pinning (FLP) to the band gap of ML Bi 2 O 2 Se. Remarkably, Pt, Sc, and Ti electrodes lead to a desirable lateral n ‐type ohmic contact because of an unusual FLP above the ML Bi 2 O 2 Se conduction band as a result of electrode work function modification at the interface. Therefore, high performance is anticipated for ML Bi 2 O 2 Se devices with these low‐resistance ohmic contacts.
Type of Medium:
Online Resource
ISSN:
2513-0390
,
2513-0390
DOI:
10.1002/adts.201800178
Language:
English
Publisher:
Wiley
Publication Date:
2019
detail.hit.zdb_id:
2894557-8
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