In:
Materials Research Express, IOP Publishing, Vol. 7, No. 10 ( 2020-10-01), p. 105907-
Abstract:
The influence of excessive H 2 flow during barrier growth on optical and electrical properties of InGaN light-emitting diodes (LEDs) are investigated in this study. The room temperature photoluminescence of LEDs decays with excessive H 2 treatment. Temperature-dependent photoluminescence (TDPL) reveals an increase of the density and a decrease of the activation energy of deep non-radiative recombination centers in the H 2 treated LEDs. The external quantum efficiency (EQE) of the LEDs suffers from excessive H 2 treatment. The leakage current on the reverse and forward sides of the LEDs are reduced significantly when treated with H 2 , which may be due to the suppressed Poole–Frenkel effect.
Type of Medium:
Online Resource
ISSN:
2053-1591
DOI:
10.1088/2053-1591/abc18f
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2020
detail.hit.zdb_id:
2760382-9
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