In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 2R ( 1993-02-01), p. 711-
Abstract:
High-quality Ga 1- x In x As 1- y Sb y /InAs with mirror-smooth surfaces were grown at 650-595°C by means of Liquid Phase Epitaxy (LPE). The compositional and growth temperature dependences of the cutoff wavelength for epilayers were investigated. Van der Pauw measurements, optical microscopy, Fourie Transform IR (FTIR) spectroscopy, Electron Probe Microanalysis (EPMA), Secondary Ion Mass Spectroscopy (SIMS) and Photoluminescence (PL) spectroscopy were used to characterize the quality of epilayers. The results show that the purity of epilayers is considerably improved by doping Gd in the melt. Room-temperature electron mobility up to 30000 cm 2 /(V·s) with carrier density of 5.7×10 15 cm -3 and full width at halfmaximum (FWHM) of the PL spectra as narrow as 12.45 meV, which are the best results so far for this material to our knowledge, have been achieved. The cutoff wavelengths of epilayers are between 3.4 and 5.0 mm at room temperature.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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