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  • 1
    In: Advanced Functional Materials, Wiley
    Abstract: Photoelectric synaptic devices with optical sensing capability are of great importance in simulating human vision systems. Especially realizing all‐in‐one vision neuristor on silicon based new materials and principles is being pursued. 2D van der Waals (vdW) materials have the unique advantage of arbitrary stacking on demand. Herein, a full‐vdW two‐terminal 2D ferroelectric α ‐In 2 Se 3 /SnSe p–n heterojunction is proposed to construct an optoelectronic neuristor to simulate visual synaptic functions. Implementation of these simulations is attributed to the co‐modulation of the electrical polarization reconfigurable built‐in electric field caused by p–n junction and photo‐inducing ferroelectric polarization switching. These functions include ultra‐high paired‐pulse facilitation  index (457%), short synaptic plasticity, long synaptic plasticity, and retina‐like optical adaptations. The high PPF is crucial for high‐precision decoding and processing of visual information. Meanwhile, the classical Pavlovian conditioned reflexes associated with associative learning are also emulated showing the ability of the device to handle complex electrical and optical inputs. This study demonstrates that two‐terminal ferroelectric p–n heterojunctions have great potential in high‐precision multifunctional optoelectronic visual synaptic devices.
    Type of Medium: Online Resource
    ISSN: 1616-301X , 1616-3028
    Language: English
    Publisher: Wiley
    Publication Date: 2023
    detail.hit.zdb_id: 2029061-5
    detail.hit.zdb_id: 2039420-2
    SSG: 11
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  • 2
    Online Resource
    Online Resource
    Royal Society of Chemistry (RSC) ; 2021
    In:  Materials Horizons Vol. 8, No. 5 ( 2021), p. 1472-1480
    In: Materials Horizons, Royal Society of Chemistry (RSC), Vol. 8, No. 5 ( 2021), p. 1472-1480
    Type of Medium: Online Resource
    ISSN: 2051-6347 , 2051-6355
    Language: English
    Publisher: Royal Society of Chemistry (RSC)
    Publication Date: 2021
    detail.hit.zdb_id: 2744250-0
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  • 3
    Online Resource
    Online Resource
    IOP Publishing ; 2023
    In:  Materials Futures Vol. 2, No. 3 ( 2023-09-01), p. 035301-
    In: Materials Futures, IOP Publishing, Vol. 2, No. 3 ( 2023-09-01), p. 035301-
    Abstract: It is crucial to develop an advanced artificially intelligent optoelectronic information system that accurately simulates photonic nociceptors like the activation process of a human visual nociceptive pathway. Visible light reaches the retina for human visual perception, but its excessive exposure can damage nearby tissues. However, there are relatively few reports on visible light–triggered nociceptors. Here, we introduce a two-dimensional natural defective III–VI semiconductor β -In 2 S 3 and utilize its broad spectral response, including visible light brought by intrinsic defects, for visible light–triggered artificial photonic nociceptors. The response mode of the device, under visible light excitation, is very similar to that of the human eye. It perfectly reproduces the pain perception characteristics of the human visual system, such as ‘threshold,’ ‘relaxation,’ ‘no adaptation’, and ‘sensitization’. Its working principle is attributed to the mechanism of charge trapping associated with the intrinsic vacancies in In 2 S 3 nanosheets. This work provides an attractive material system (intrinsic defective semiconductors) for broadband artificial photonic nociceptors.
    Type of Medium: Online Resource
    ISSN: 2752-5724
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 2023
    detail.hit.zdb_id: 3106737-2
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  • 4
    Online Resource
    Online Resource
    Springer Science and Business Media LLC ; 2022
    In:  Nano Research Vol. 15, No. 8 ( 2022-08), p. 7597-7603
    In: Nano Research, Springer Science and Business Media LLC, Vol. 15, No. 8 ( 2022-08), p. 7597-7603
    Type of Medium: Online Resource
    ISSN: 1998-0124 , 1998-0000
    Language: English
    Publisher: Springer Science and Business Media LLC
    Publication Date: 2022
    detail.hit.zdb_id: 2442216-2
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  • 5
    Online Resource
    Online Resource
    IOP Publishing ; 2020
    In:  Chinese Physics B Vol. 29, No. 4 ( 2020-04-01), p. 048401-
    In: Chinese Physics B, IOP Publishing, Vol. 29, No. 4 ( 2020-04-01), p. 048401-
    Abstract: With the need of the internet of things, big data, and artificial intelligence, creating new computing architecture is greatly desired for handling data-intensive tasks. Human brain can simultaneously process and store information, which would reduce the power consumption while improve the efficiency of computing. Therefore, the development of brain-like intelligent device and the construction of brain-like computation are important breakthroughs in the field of artificial intelligence. Memristor, as the fourth fundamental circuit element, is an ideal synaptic simulator due to its integration of storage and processing characteristics, and very similar activities and the working mechanism to synapses among neurons which are the most numerous components of the brains. In particular, memristive synaptic devices with optoelectronic responding capability have the benefits of storing and processing transmitted optical signals with wide bandwidth, ultrafast data operation speed, low power consumption, and low cross-talk, which is important for building efficient brain-like computing networks. Herein, we review recent progresses in optoelectronic memristor for neuromorphic computing, including the optoelectronic memristive materials, working principles, applications, as well as the current challenges and the future development of the optoelectronic memristor.
    Type of Medium: Online Resource
    ISSN: 1674-1056
    Language: Unknown
    Publisher: IOP Publishing
    Publication Date: 2020
    detail.hit.zdb_id: 2412147-2
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