In:
Acta Physica Sinica, Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences, Vol. 45, No. 11 ( 1996), p. 1898-
Abstract:
The behavior of interface formed by growing this Sm film on the Si(100)2×1 substrate at room temperature has been investigated by cove level and valence band photoemission using synchrotron radiation. The experimental results show the existence of distinct stages corresponding to chemisorption and agglomeration of Sm atoms(coverage Θ<0.5ML),reactive interdiffusion (0.5ML≤Θ≤4—6ML), and growth of metallic Sm. Compared to Si(111)7×7 the reactivity of Sm on the Si(100)2×1 substrate is enhanced and a greater tendency for interdiffusion of Sm and Si is observed. Also we have discussed the interface formation and the interface profile carefully.
Type of Medium:
Online Resource
ISSN:
1000-3290
,
1000-3290
Language:
Unknown
Publisher:
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Publication Date:
1996
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