In:
Advanced Photonics Research, Wiley, Vol. 3, No. 4 ( 2022-04)
Kurzfassung:
It remains urgent to integrate conductive InSb colloidal quantum dots (CQDs) for sensitive and fast near‐infrared (NIR) photodetection applications. Herein, nanocrystallized InSb CQDs ( 〈 12 nm in diameter) have been successfully obtained via hot‐injection procedure, and demonstrated a very narrow absorption peak centered at 1406 nm with a full width at half maximum (FWHM) of 10.3 nm and a broader absorption peak at 1702 nm, indicating strong quantum‐confined effect. After integrating these InSb CQDs with [6,6]‐phenyl C 61 ‐butyric acid methyl ester (PCBM) and polymeric triphenyldiamine (poly( N , N ′‐diphenylben‐zidine diphenylether), poly‐TPD) bulk junction, the obtained Si/SiO 2 /InSb CQDs:PCBM:poly‐TPD/Ag photodetector has reached long‐wavelength response up to 1400 nm, fast response time ( 〈 80 ms), and superior on/off ratio. In specific, charge carriers can be effectively transported due to favorable energy alignment and interpenetrating network formed in the inorganic/organic blend films. The work provides a new strategy to synthesize high‐quality InSb CQD and reveal its starting point toward low‐cost, practical, and sensitive next‐generation NIR detection.
Materialart:
Online-Ressource
ISSN:
2699-9293
,
2699-9293
DOI:
10.1002/adpr.202100305
Sprache:
Englisch
Verlag:
Wiley
Publikationsdatum:
2022
ZDB Id:
3009932-8
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