In:
Solid State Phenomena, Trans Tech Publications, Ltd., Vol. 114 ( 2006-7), p. 297-302
Abstract:
Nano-composites consisting of a primary matrix phase of hard nanocrystalline SiC and a
secondary nanocrystalline GaAs semiconductor phase were obtained by high-pressure zone infiltration. The synthesis occurs in three stages: (i) at room- temperature the SiC nanopowder is
compacted under high pressure to 8 GPa, (ii) the temperature is increased to 1240°C, above the melting point of GaAs, and the pores were filled with liquid, (iii) on cooling GaAs nanocrystallites
grow in the pores. The synthesis was performed using a toroid-type high-pressure apparatus (IHPP PAS, Warsaw) and a six anvil cubic press (MAX80 at HASYLAB, Hamburg). X-ray diffraction
studies were performed with a laboratory D5000 Siemens diffractometer. The phase compositionn, grain size and macrostrains in the synthesized materials were examined. The microstructure of the
composites was characterized using a Scanning Electron Microscopy (SEM), and High Resolution Transmission Electron Microscopy (TEM). Far-infrared reflectivity and Raman spectroscopy
measurements were used to trace built-in strains.
Type of Medium:
Online Resource
ISSN:
1662-9779
DOI:
10.4028/www.scientific.net/SSP.114
DOI:
10.4028/www.scientific.net/SSP.114.297
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2006
detail.hit.zdb_id:
2051138-3
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