In:
Advanced Materials, Wiley, Vol. 30, No. 40 ( 2018-10)
Abstract:
VO 2 (B) features two lithiation/delithiation processes, one of which is kinetically facile and has been commonly observed at 2.5 V versus Li/Li + in various VO 2 (B) structures. In contrast, the other process, which occurs at 2.1 V versus Li/Li + , has only been observed at elevated temperatures due to large interaction energy barrier and extremely sluggish kinetics. Here, it is demonstrated that a rational design of atomically thin, 2D nanostructures of VO 2 (B) greatly lowers the interaction energy and Li + ‐diffusion barrier. Consequently, the kinetically sluggish step is successfully enabled to proceed at room temperature for the first time ever. The atomically thin 2D VO 2 (B) exhibits fast charge storage kinetics and enables fully reversible uptake and removal of Li ions from VO 2 (B) lattice without a phase change, resulting in exceptionally high performance. This work presents an effective strategy to speed up intrinsically sluggish processes in non‐van der Waals layered materials.
Type of Medium:
Online Resource
ISSN:
0935-9648
,
1521-4095
DOI:
10.1002/adma.201803594
Language:
English
Publisher:
Wiley
Publication Date:
2018
detail.hit.zdb_id:
1474949-X
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