In:
Nanotechnology, IOP Publishing, Vol. 35, No. 36 ( 2024-09-02), p. 365203-
Abstract:
Optimizing the width of depletion region is a key consideration in designing high performance photovoltaic photodetectors, as the electron-hole pairs generated outside the depletion region cannot be effectively separated, leading to a negligible contribution to the overall photocurrent. However, currently reported photovoltaic mid-infrared photodetectors based on two-dimensional heterostructures usually adopt a single pn junction configuration, where the depletion region width is not maximally optimized. Here, we demonstrate the construction of a high performance broadband mid-infrared photodetector based on a MoS 2 /b-AsP/MoS 2 npn van der Waals heterostructure. The npn heterojunction can be equivalently represented as two parallel-stacked pn junctions, effectively increasing the thickness of the depletion region. Consequently, the npn device shows a high detectivity of 1.3 × 10 10 cmHz 1/2 W −1 at the mid-infrared wavelength, which is significantly improved compared with its single pn junction counterpart. Moreover, it exhibits a fast response speed of 12 μs, and a broadband detection capability ranging from visible to mid-infrared wavelengths.
Type of Medium:
Online Resource
ISSN:
0957-4484
,
1361-6528
DOI:
10.1088/1361-6528/ad568e
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2024
detail.hit.zdb_id:
1054118-4
detail.hit.zdb_id:
1362365-5
SSG:
11
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