In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 50, No. 4S ( 2011-04-01), p. 04DG06-
Abstract:
GaN-based thin-film vertical-structured light-emitting diodes (VLEDs) with a GaO x film atop an n-GaN layer roughened via KrF laser irradiation and a TiO 2 /SiO 2 distributed Bragg reflector (DBR) are proposed and investigated. As compared with regular VLEDs with an Al reflector and without a roughened GaO x film, the proposed VLEDs with a chip size of 1 mm 2 show a typical increase in light output power by 68% at 350 mA and by 51% at 750 mA, which is attributed to the enhanced reflectivity and current blocking capability of the DBR layer, the surface roughening with circular GaN protrusions, and the formation of a surface GaO x film by KrF laser irradiation.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.50.04DG06
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2011
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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