In:
Applied Physics Letters, AIP Publishing, Vol. 115, No. 22 ( 2019-11-25)
Abstract:
All-solution-processed quantum dot (QD) upconversion devices were realized by constructing a colloidal PbS QD near-infrared (NIR ∼ 1 μm)-sensitive layer on the cathode side of a red CdSe quantum dot light-emitting diode (QLED). Different from conventional upconversion devices, we utilized the photogenerated electrons rather than the holes created in the NIR-sensitive layer to inject into the QLED for visible light emission. Consequently, we obtained high-performance devices with a maximum photon-to-photon conversion efficiency of 3.35% and a luminance on-off ratio of approximately 8 × 103. The results indicate that the device structure could be used to realize low-cost and portable high-performance QD-based upconversion devices via solution-processing.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2019
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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