In:
Applied Physics Letters, AIP Publishing, Vol. 91, No. 17 ( 2007-10-22)
Abstract:
We have investigated lateral self-assembling in In0.4Ga0.6As∕GaAs quantum dot (QD) multilayers, which were grown by molecular beam epitaxy on GaAs(100) and (n11)B substrates with n=9,8,7,5,4,3. The lateral self-assembling and the QD size distribution have been studied by atomic force microscopy depending on substrate orientation and the number of periods within the multilayers. The observed two-dimensional ordering can be described by a centered rectangular surface unit cell. Derived autocorrelation functions exhibit the most pronounced lateral QD assembling along the elastically soft directions [1¯n0]. This can be attributed to elastic interaction, the particular elastic anisotropy of the high index substrates, and the minimization of the strain energy.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2007
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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