In:
Materials Science Forum, Trans Tech Publications, Ltd., Vol. 725 ( 2012-7), p. 71-74
Abstract:
Role of 3C-SiC intermediate layer (3C-SiC IL) and a propagation of crystal defects from 3C-SiC IL to III-nitride epilayers has been investigated by observing the interface between the 3C-SiC IL and III-nitride epilayers. We found that better quality epilayers were obtained by using such intermediate layers than by direct growth on Si substrates. In the case of III-nitride epilayers grown directly on Si, the layers grown at the initial stage are not flat. The 3C-SiC IL grown on Si (111) substrates has many stacking faults (SFs) that form along the 3C-SiC {111} planes. The initial III-nitride films have V-shaped trenches due to the SFs of the 3C-SiC IL. However, some SFs do not lead to the V-shaped defects.
Type of Medium:
Online Resource
ISSN:
1662-9752
DOI:
10.4028/www.scientific.net/MSF.725
DOI:
10.4028/www.scientific.net/MSF.725.71
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2012
detail.hit.zdb_id:
2047372-2
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