In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 51, No. 6R ( 2012-06-01), p. 060201-
Abstract:
The effects of the Cl 2 -based inductively coupled plasma (ICP) etching of GaN on the interface properties of Al 2 O 3 /GaN structures prepared by atomic layer deposition (ALD) were investigated. We used n-GaN layers grown on freestanding n + -GaN substrates with low dislocation density. The ICP etching caused slight disorder of the chemical bonds at the GaN surface and monolayer-level interface roughness at the Al 2 O 3 /GaN interface, resulting in poor capacitance–voltage ( C – V ) characteristics due to high-density interface states including nitrogen-vacancy (V N ) related levels. The postannealing process in N 2 at 400 °C drastically improved the C – V characteristics, probably owing to the partial recovery of the V N -related defects and the increased ordering of chemical bonds in the GaN surface region.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.51.060201
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2012
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
Permalink