In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 49, No. 7R ( 2010-07-01), p. 071104-
Abstract:
We report on optimization of the growth conditions for Mg x Zn 1- x O ( x =0,0.04,0.05,0.12) thin films grown on c -plane Zn-polar ZnO single crystal substrates by using plasma-assisted molecular beam epitaxy (PAMBE). A normal vector to the ZnO substrate surfaces was angled at 0.5±0.1° off from the [0001] c -axis toward the [1100] direction, leading to a stable step-and-terrace structure. A growth temperature ( T g ) higher than 800 °C led to the ZnO films presenting the first excited state luminescence of A-free excitons in photoluminescence (PL) spectra at 12 K. A T g higher than 800 °C enhanced optical attributes of a Mg x Zn 1- x O film. The longest PL lifetime of fast-decay components reached 3.5 ns in time-resolved PL measurement for an Mg 0.12 Zn 0.88 O film grown at 900 °C, indicating a concentration of nonradiative recombination centers is substantially eliminated compared to the previously reported PL lifetime of 60 ps for an Mg 0.11 Zn 0.89 O film grown by pulsed laser deposition.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.49.071104
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2010
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
Permalink