In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 27, No. 1R ( 1988-01-01), p. 40-
Abstract:
An rf plasma decomposition of SiH 4 under a magnetic field was investigated. It was confirmed by the optical emission spectra that a high-electron-density plasma can be produced under a magnetic field. High-quality a-Si films with a photosensitivity of σ ph /σ d of 7×10 5 were obtained at a high deposition rate of 10 Å/s under the magnetic field. The a-Si solar cells with i-layers deposited at a high deposition rate under a magnetic field have a higher open-circuit voltage and a higher conversion efficiency than those without the magnetic field; a conversion efficiency of 10.1% under AM1(100mW/cm 2 ) illumination was obtained at a deposition rate of 10 Å/s. The rf plasma decomposition of SiH 4 under a magnetic field is thought to be very suitable for fabricating a-Si solar cells with a high conversion efficiency at a high deposition rate.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1988
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
Permalink