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  • AIP Publishing  (2)
  • Toyama, Toshihiko  (2)
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  • AIP Publishing  (2)
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  • 1
    Online Resource
    Online Resource
    Structural and luminescence properties of nanostructured ZnS:Mn
    AIP Publishing ; 2000
    In:  Applied Physics Letters Vol. 77, No. 9 ( 2000-08-28), p. 1301-1303
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 77, No. 9 ( 2000-08-28), p. 1301-1303
    Abstract: We have studied structural and luminescence properties of nanostructured (NS-) ZnS:Mn which has potential applications in thin-film electroluminescence (TFEL) devices. As a NS-ZnS:Mn system, a ZnS:Mn/Si3N4 multilayer having thicknesses of 2.5 nm for ZnS and 0.6 nm for Si3N4 was prepared by a conventional rf-magnetron sputtering method. Grazing incidence x-ray reflectometry and x-ray diffractometry show that ZnS:Mn nanocrystals were formed between the amorphous Si3N4 layers. Photoluminescence intensity associated with the Mn2+ transitions per total thickness of the ZnS:Mn layers is increased in NS-ZnS:Mn in comparison with that of the ZnS:Mn thin film, indicating the effects due to quantum confinement. The TFEL device with NS-ZnS:Mn as an emission layer exhibits a reddish-orange broad band emission with the maximum luminance of 2.8 cd/m2 under the 1-kHz sinusoidal wave operation at a voltage of 20.5 V0−p.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.1290274
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2000
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 2
    Online Resource
    Online Resource
    Ultraviolet-light-emitting AlN:Gd thin-film electroluminescence device using an energy transfer from Gd3+ ions to N2 molecules
    AIP Publishing ; 2009
    In:  Journal of Applied Physics Vol. 105, No. 8 ( 2009-04-15)
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 105, No. 8 ( 2009-04-15)
    Abstract: An ultraviolet (UV)-light-emitting AlN:Gd thin-film electroluminescence device (TFELD) was demonstrated for application to flat-panel lighting. AlN:Gd thin films were deposited by rf magnetron sputtering at 200 °C and applied to an ac-voltage-driven TFELD with a double-insulating structure as an emission layer. UV-light emission was observed over a threshold voltage of 270 V for a 5 kHz sinusoidal ac voltage. Electroluminescence (EL) spectra were compared with photoluminescence and cathodoluminescence spectra of AlN:Gd originating from Gd3+ P6j→S87/2 transitions and with an emission spectrum of the second positive system (C3Πu→B3Πg) of N2 molecules. As a result, an energy transfer from Gd3+ P6j→S87/2 to N2 C3Πu→B3Πg is discussed as a likely mechanism for the UV EL. Finally, a preliminary result, associated with the conversion from UV light into blue-green light via a phosphor, is demonstrated for the color tunability of the TFELD.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.3116222
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2009
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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