In:
Journal of Applied Physics, AIP Publishing, Vol. 93, No. 3 ( 2003-02-01), p. 1363-1366
Abstract:
Ultraviolet light-emitting diodes operating at 280 nm, grown by gas source molecular-beam epitaxy with ammonia, are described. The device is composed of n- and p-type superlattices of AlN(1.2 nm thick)/AlGaInN(0.5 nm thick) doped with Si and Mg, respectively. With these superlattices, and despite the high average Al content, we obtain hole concentrations of (0.7–1.1)×1018 cm−3, with the mobility of 3–4 cm2/V s and electron concentrations of 3×1019 cm−3, with the mobility of 10–20 cm2/V s, at room temperature. These carrier concentrations are sufficient to form effective p–n junctions needed in UV light sources.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2003
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
Permalink