In:
Journal of Physics D: Applied Physics, IOP Publishing, Vol. 44, No. 24 ( 2011-06-22), p. 245404-
Abstract:
Inhibiting the easy oxidation nature of SiC nanostructure surface is a challenge for its application in nanodevices. Here, we have demonstrated the fabrication of C-sheathed SiC nanocables via a designed chemical vapour deposition method, in which the use of a steel-hoop-like sample support favours the growth of SiC/C nanocables with surface modification of C coatings. The obtained SiC/C nanocables are systematically characterized by scanning electron microscopy, x-ray diffraction, transmission electron microscopy and Raman spectroscopy. The electrical property measurements suggest that the surface modification of SiC nanostructures by C coatings can not only modulate the SiC surface property from hydrophilic to hydrophobic, but also significantly enhance their electrical properties.
Type of Medium:
Online Resource
ISSN:
0022-3727
,
1361-6463
DOI:
10.1088/0022-3727/44/24/245404
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2011
detail.hit.zdb_id:
209221-9
detail.hit.zdb_id:
1472948-9
Permalink