In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 53, No. 4S ( 2014-04-01), p. 04EM05-
Abstract:
A new n-type magnetic semiconductor (In 1− x ,Co x )As ( x = 3–18%) has been successfully grown by low-temperature molecular beam epitaxy (LT-MBE) on GaAs(001) substrates. Reflection high energy electron diffraction (RHEED) patterns during the MBE growth and transmission electron microscopy (TEM) images indicate that (In,Co)As layers have zinc-blende crystal structure with a small fraction of embedded CoAs nanoclusters. The electron concentration of the (In,Co)As layers can be changed in the range of 1.9 × 10 18 –2.4 × 10 19 cm −3 by changing the Co concentration. The metal–insulator transition (MIT) is observed at x = 5%. Large negative magnetoresistance (up to −17.5% at 0.95 T) is observed at low temperature and can be attributed to spin-disorder scattering in the (In,Co)As matrix.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.53.04EM05
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2014
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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