In:
physica status solidi c, Wiley, Vol. 8, No. 7-8 ( 2011-07), p. 2463-2465
Abstract:
We report on the fabrication of GaInN‐based solar cells using GaInN/GaInN superlattices as active layers and also as underlying layers beneath the active layers. We obtained pit‐free surfaces, even with a high InN molar fraction, using the superlattices. As a result, the maximum external and internal quantum efficiencies reached 60%, and 88%, respectively. The open‐circuit voltage of the soalr cells was 1.77 V, the short‐circuit current density was 3.08 mA/cm 2 , and the fill factor was 70.3%. A conversion efficiency of 2.46% was achieved at room temperature under simulared 1.5 sun × AM1.5G illumination using a solar simulator. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Type of Medium:
Online Resource
ISSN:
1862-6351
,
1610-1642
DOI:
10.1002/pssc.201001152
Language:
English
Publisher:
Wiley
Publication Date:
2011
detail.hit.zdb_id:
2105580-4
detail.hit.zdb_id:
2102966-0
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