In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 51, No. 6R ( 2012-06-01), p. 065701-
Abstract:
The anion composition of InGaAs surfaces was controlled by using plasma processing, and its effects on the metal–insulator–semiconductor (MIS) properties were investigated. On-line Auger electron spectroscopy showed that H 2 plasma cleaning on InGaAs effectively reduced the surface oxides and removed approximately one monolayer of As. Following this by plasma nitridation successfully introduced approximately two monolayers of N; however, the nitrided layer also contained an oxide component. Although the electrical properties of the Al 2 O 3 /InGaAs capacitors were degraded by H 2 plasma processing, subsequent nitridation restored well-behaved MIS characteristics to the devices. The channel mobility of MIS field-effect transistors with a nitride interface was higher than that of the control device.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.51.065701
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2012
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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