In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 198 ( 1990)
Abstract:
We discuss room temperature CW operation of AlGaAs/GaAs SQW lasers and GaAs MESFETs with good pinch-off characteristic on SiO 2 -back coated Si. The all-MOCVD-grown,SQW laser on Si with thermal-cycle annealing, which has the EPD of 1.5 × 10 7 cm −2 , has the threshold current as low as 55 mA (1.41 kA/cm 2 ) under CW operation at room temperature. The pinch-off and the sidegating effect characteristics of GaAs MESFETs on Si have been improved by using SiO 2 -back coating of Si and higher growth temperature. The maximum transconductance of 160 mS/mm has been obtained for the MESFET with a 2.5 × 15 µm gate. The main origin of sidegating effect associates with the channel layer-undoped GaAs layer beneath it interface. The SiO 2 -back coating is found effective to obtain a lower background electron concentration in undoped GaAs layer and to control doping of the active layer in GaAs/Si.
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-198-141
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
1990
Permalink