In:
Journal of Applied Physics, AIP Publishing, Vol. 111, No. 7 ( 2012-04-01)
Abstract:
Effects of the LaMnO3 (LMO) buffer layer on the magnetoresistive behaviors of La0.67A0.33MnO3/LaMnO3/SrTiO3:0.05 wt% Nb (LAMO/LMO/STON, A = Ca, Sr) have been experimentally studied. In addition to an enhanced response to a magnetic field, the current-voltage relations show a downward shift in magnetic field, indicating an increase of the junction resistance. It is completely different from that observed in the junctions without buffer layer. The positive magnetoresistance (MR) is strongly dependent on the thickness of the LMO layer, increasing first then decreasing with the increase of layer thickness. Furthermore, it is significantly stronger in LCMO/LMO/STON than in LSMO/LMO/STON. The maximal MR at 50 K is ∼90% for LCMO/LMO/STON and ∼52% for LSMO/LMO/STON, occurring at the LMO thickness of 4 nm under the field of 5 T. The MR persists up to 350 K, and it is ∼30% and ∼24% for the LCMO and LSMO junctions, respectively. An analysis of the current-voltage characteristics indicates an increase in interfacial barrier in magnetic field, which is the origin for the positive MR.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
2012
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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