In:
Applied Physics Letters, AIP Publishing, Vol. 112, No. 13 ( 2018-03-26)
Abstract:
To bridge the gap of access time between memories and storage systems, the concept of storage class memory has been put forward based on emerging nonvolatile memory technologies. For all the nonvolatile memory candidates, the unpleasant tradeoff between operation speed and retention seems to be inevitable. To promote both the write speed and the retention of phase change memory (PCM), Sc doped Ge2Sb2Te5 (SGST) has been proposed as the storage medium. Octahedral Sc-Te motifs, acting as crystallization precursors to shorten the nucleation incubation period, are the possible reason for the high write speed of 6 ns in PCM cells, five-times faster than that of Ge2Sb2Te5 (GST) cells. Meanwhile, an enhanced 10-year data retention of 119 °C has been achieved. Benefiting from both the increased crystalline resistance and the inhibited formation of the hexagonal phase, the SGST cell has a 77% reduction in power consumption compared to the GST cell. Adhesion of the SGST/SiO2 interface has been strengthened, attributed to the reduced stress by forming smaller grains during crystallization, guaranteeing the reliability of the device. These improvements have made the SGST material a promising candidate for PCM application.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2018
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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