In:
Applied Physics Letters, AIP Publishing, Vol. 96, No. 20 ( 2010-05-17)
Abstract:
The mechanism for thermally stable indium-containing silver [Ag(In)] Ohmic contact on p-type GaN has been investigated. The specific contact resistivity as low as 3.8×10−5 Ω cm2 and a high reflectance of 88.4% at a 460 nm wavelength were obtained by annealing Ag(0.5 wt % In) alloy contact at 450 °C in air ambient. The In atoms in Ag matrix made In–O chemical bonds, producing a tensile stress in the film. This compensated thermal compressive stress built in the Ag film. As a result, In atoms in Ag film play a role in preventing Ag contact from agglomeration, leading to high reflectance and good thermal stability.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2010
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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