In:
Applied Physics Express, IOP Publishing, Vol. 9, No. 8 ( 2016-08-01), p. 084102-
Abstract:
We characterized an ionic liquid (1-butyl-3-methylimidazolium nitrate, C 8 H 15 N 3 O 3 ) as a photo-electrochemical etchant for fabricating normally-off AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs). Using the ionic liquid, we achieved an etching rate of ∼2.9 nm/min, which is sufficiently low to facilitate good etching control. The normally-off AlGaN/GaN MIS-HEMT was fabricated with an etching time of 6 min, with the 20 nm low-pressure chemical vapor deposition (LPCVD) silicon nitride (Si 3 N 4 ) gate dielectric exhibiting a threshold voltage shift from −10 to 1.2 V, a maximum drain current of more than 426 mA/mm, and a breakdown voltage of 582 V.
Type of Medium:
Online Resource
ISSN:
1882-0778
,
1882-0786
DOI:
10.7567/APEX.9.084102
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2016
detail.hit.zdb_id:
2417569-9
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