In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 49, No. 10R ( 2010-10-01), p. 104202-
Abstract:
In this paper, we propose a novel fin and recess-channel metal oxide semiconductor field effect transistor (MOSFET) for sub-50 nm dynamic random access memory (DRAM) cell application. Also, it is compared with the recess-channel-array transistor (RCAT). In the proposed device, a silicon fin region is added to the recessed channel MOSFET. Thanks to the additional current path through the silicon fin with the wide source/drain width, the FiReFET shows excellent current drivability. To reduce gate-induced drain leakage (GIDL) current, we adopt an underlapped device structure. As a result, it is found that the optimized underlap structure helps to prevent the OFF state leakage current induced by the increase of the gate work function.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.49.104202
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2010
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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