In:
Journal of Applied Physics, AIP Publishing, Vol. 62, No. 10 ( 1987-11-15), p. 4187-4191
Abstract:
A dense electron-hole plasma is created in Al0.52Ga0.48As using picosecond excitation with high excess energy. Its properties are studied by time-resolved photoluminescence and transient transmission spectroscopy. Simultaneous emission out of the indirect X and the direct Γ band is observed. Alloy disorder strongly influences the bimolecular recombination by allowing for quasidirect transitions and stimulated emission out of the indirect X band. The electron-hole plasma, whose electrons reside mainly in the X valleys, causes strong optical nonlinearities at the direct absorption edge. A persistent absorption bleaching and large induced refractive-index changes due to band filling of the valence band and induced absorption due to band-gap renormalization are observed.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1987
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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