In:
Progress in Photovoltaics: Research and Applications, Wiley, Vol. 27, No. 6 ( 2019-06), p. 491-500
Abstract:
Polycrystalline W and H codoped In 2 O 3 (In 2 O 3 :W,H) transparent conducting oxide (TCO) layers with high electron mobility were found to enhance both the short‐circuit current density ( J sc ) and fill factor (FF) of Cu(In,Ga)Se 2 (CIGS) modules with glass/Mo/CIGS/CdS/ZnO/TCO structures. An In 2 O 3 :W,H TCO layer was formed by reactive plasma deposition without substrate heating, followed by postannealing at 150°C. A phase transition from amorphous to polycrystalline was confirmed during postannealing, and a layer with micrometer‐scale lateral grain sizes evenly covered the rough ZnO surface generated by the naturally textured CIGS. The crystallized In 2 O 3 :W,H film showed high electron mobility (apprixmately 80 cm 2 V −1 s −1 ) at a carrier density of approximately 2 to 3 × 10 20 cm −3 . Therefore, the In 2 O 3 :W,H layer achieved lower sheet resistance and lower free carrier absorption than a ZnO:Al layer, which is commonly used in CIGS modules. The CIGS mini‐module employing the In 2 O 3 :W,H layer with a designated area of 3.792 cm 2 exhibited a higher efficiency ( η ) of 20.93% ( V oc = 3.081 V [translated value per subcell: 0.770 V], short‐circuit current = 33.21 mA [ J sc = 35.03 mA cm −2 ], FF = 0.775) with improved J sc and FF, when compared with a mini‐module employing a ZnO:Al layer. The results indicate that polycrystalline In 2 O 3 ‐based TCOs with high electron mobility are suitable for CIGS solar cells and modules.
Type of Medium:
Online Resource
ISSN:
1062-7995
,
1099-159X
Language:
English
Publisher:
Wiley
Publication Date:
2019
detail.hit.zdb_id:
2023295-0
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