In:
Energy & Environmental Science, Royal Society of Chemistry (RSC), Vol. 17, No. 7 ( 2024), p. 2512-2520
Abstract:
This study reports on the surface charge transfer doping of narrow-bandgap Sn/Pb binary metal perovskites to controllably tune the carrier concentration and electrical properties, and therefore reduce the energy disorder. The excess holes on the Sn/Pb binary metal perovskite surface can be compensated by the applied benzyl viologen (BV in short) molecules to reduce the self-p-doping hole density. Consequently, the doping level of the BV-modified Sn–Pb perovskite films was carefully altered from heavy p-type to less p-type with up-shifted Fermi level and considerably reduced the surface energetic disorder, which effectively suppressed the nonradiative recombination at the perovskite/electron transport layer interface. The perovskite solar cells (PSCs) using narrow-bandgap FA 0.7 MA 0.3 Sn 0.5 Pb 0.5 I 3 exhibited dramatically enhanced photovoltaic performance with an optimized power conversion efficiency (PCE) up to 22.58%, thus representing one of the highest PCE among Sn/Pb binary metal PSCs reported so far. Furthermore, combining the narrow-bandgap (1.25 eV) FA 0.7 MA 0.3 Sn 0.5 Pb 0.5 I 3 bottom sub-cell with a wide-bandgap (1.78 eV) Cs 0.2 FA 0.8 PbI 1.8 Br 1.2 top sub-cell, the best performing 2-terminal all-perovskite tandem solar cell achieved a prominent PCE of 26.33%. Moreover, the optimized tandem device exhibited excellent long-term stability by retaining 88.3% of the initial PCE following 1000 h of operation at the maximum power point under 1-sun illumination.
Type of Medium:
Online Resource
ISSN:
1754-5692
,
1754-5706
Language:
English
Publisher:
Royal Society of Chemistry (RSC)
Publication Date:
2024
detail.hit.zdb_id:
2439879-2
detail.hit.zdb_id:
2448515-9
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