In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 37, No. 7A ( 1998-07-01), p. L778-
Abstract:
In this paper, the n-channel Flash memory device degradation by utilizing the drain-avalanche
hot electron (DAHE) self-convergence (S-C) scheme is demonstrated for the first time. The injected hole originated by the channel electron induced avalanche hot hole generation is believed to
be responsible for this degradation. This hole injection phenomena not only result in the interface state generation but also lead to the hole trapping in the tunnel oxide. The increased interface
states degrade the conduction of the channel current severely, which leads to abnormal write/erase ( W / E ) endurance characteristics. The trapped holes in the tunnel oxide increase the
tunneling probability and cause the gate disturbance issue. From the concerns of long term reliability, the self-convergence operation by utilizing the DAHE mechanism is not a proper scheme
for reliable Flash memory products.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.37.L778
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1998
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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