In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 20, No. 1 ( 2002-01-01), p. 419-421
Abstract:
Fabrication of sub-100 nm junctions in ultralarge scale integration becomes extremely difficult due to anomalous diffusion of B in Si. By judiciously placing vacancy and interstitial defects at different depths by implantation of Si ions with different incident energies and dosages in Si, B diffusion can be enhanced or retarded. After preimplantation with 50 or 500 keV Si+ ions to produce surface vacancy-rich regions, Si samples were B deposited and annealed at various temperatures between 900 and 1010 °C. B diffusion retardation was observed in both implantation conditions after low temperature annealing, while B diffusion enhancement occurred in 50 keV implanted samples after annealing at a high temperature. Choosing high energy implantation to separate vacancies and interstitials can reduce the boron diffusion significantly. Such suppression became more obvious with higher implant dose. Junctions less than 10 nm deep (at 1×1014 cm−3 by carrier concentration profiles) can be formed.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2002
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
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