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  • Seo, Yena  (3)
  • 2015-2019  (3)
  • 1
    Online Resource
    Online Resource
    Korean Association of Child Studies ; 2015
    In:  Korean Journal of Child Studies Vol. 36, No. 1 ( 2015-02-28), p. 65-83
    In: Korean Journal of Child Studies, Korean Association of Child Studies, Vol. 36, No. 1 ( 2015-02-28), p. 65-83
    Type of Medium: Online Resource
    ISSN: 1226-1688 , 2234-408X
    Language: English
    Publisher: Korean Association of Child Studies
    Publication Date: 2015
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  • 2
    In: Scientific Reports, Springer Science and Business Media LLC, Vol. 9, No. 1 ( 2019-01-10)
    Abstract: Blending organic semiconductors with insulating polymers has been known to be an effective way to overcome the disadvantages of single-component organic semiconductors for high-performance organic field-effect transistors (OFETs). We show that when a solution processable organic semiconductor (6,13-bis(triisopropylsilylethynyl)pentacene, TIPS-pentacene) is blended with an insulating polymer (PS), morphological and structural characteristics of the blend films could be significantly influenced by the processing conditions like the spin coating time. Although vertical phase-separated structures (TIPS-pentacene-top/PS-bottom) were formed on the substrate regardless of the spin coating time, the spin time governed the growth mode of the TIPS-pentacene molecules that phase-separated and crystallized on the insulating polymer. Excess residual solvent in samples spun for a short duration induces a convective flow in the drying droplet, thereby leading to one-dimensional (1D) growth mode of TIPS-pentacene crystals. In contrast, after an appropriate spin-coating time, an optimum amount of the residual solvent in the film led to two-dimensional (2D) growth mode of TIPS-pentacene crystals. The 2D spherulites of TIPS-pentacene are extremely advantageous for improving the field-effect mobility of FETs compared to needle-like 1D structures, because of the high surface coverage of crystals with a unique continuous film structure. In addition, the porous structure observed in the 2D crystalline film allows gas molecules to easily penetrate into the channel region, thereby improving the gas sensing properties.
    Type of Medium: Online Resource
    ISSN: 2045-2322
    Language: English
    Publisher: Springer Science and Business Media LLC
    Publication Date: 2019
    detail.hit.zdb_id: 2615211-3
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  • 3
    In: Advanced Materials Interfaces, Wiley, Vol. 5, No. 3 ( 2018-02)
    Abstract: In this study, triethylsilylethynyl‐anthradithiophene (TES‐ADT) films with different density of grain boundaries are used for systematic investigation of effects of grain boundary density on gas sensing properties of TES‐ADT field‐effect transistors (FETs). Grain boundary density is simply controlled by changing mixing time of TES‐ADT solution. Higher mixing time leads to higher grain boundary density, and field‐effect mobility decreases with increased grain boundary density. However, gas sensing properties exhibit the opposite behavior. Drain current and field‐effect mobility of FETs based on TES‐ADT film with higher grain boundary density increase much more upon exposure of NO 2 with electron withdrawing character. In addition, dynamic gas sensing tests reveal that response rate and sensitivity of a TES‐ADT sensor are enhanced remarkably by an increase of grain boundary density in TES‐ADT films. Grain boundaries provide a pathway for diffusion of gas molecules into channel regions and thus increase of grain boundary density is beneficial for development of highly sensitive OFET gas sensors.
    Type of Medium: Online Resource
    ISSN: 2196-7350 , 2196-7350
    URL: Issue
    Language: English
    Publisher: Wiley
    Publication Date: 2018
    detail.hit.zdb_id: 2750376-8
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